These are the most frequently used words in this book.
acceptor
across
applied
atoms
band
barrier
base
between
bias
called
carriers
case
change
channel
charge
charged
circuit
collector
concentration
crystal
current
deep
density
devices
diagram
different
diffusion
diode
does
donor
electric
electrons
emitter
energy
eq
equal
ev
even
field
fig
first
flow
forward
free
gate
greater
high
holes
impurity
increase
junction
know
large
lattice
layer
let
level
light
material
may
means
metal
motion
must
necessary
now
number
order
part
place
plate
point
potential
process
quite
region
resistance
reverse
see
semiconductor
should
shown
signal
silicon
small
smaller
source
space
state
surface
take
temperature
time
transistor
two
value
velocity
voltage
whose
work